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Infineon Technologies BFP 720ESD H6327
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BFP 720ESD H6327
Manufacturers: Infineon Technologies
Qty: 2215
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Description: Transistors RF Bipolar RF BIP TRANSISTORS
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Product Information:
RoHS:Details
Transistor Type:Bipolar
Technology:SiGe
Transistor Polarity:NPN
Frequency:43 GHz
DC Collector/Base Gain hfe Min:160
Collector- Emitter Voltage VCEO Max:4.2 V
Emitter- Base Voltage VEBO:
Continuous Collector Current:30 mA
Maximum Operating Temperature:
Configuration:Single Dual Emitter
Power Dissipation:100 mW
Mounting Style:SMD/SMT
Package / Case:SOT-343
Packaging:Reel
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